Abstract
Abstract Defects passivation in electron transport layer (ETL) is a key issue to optimize the performance of polymer solar cells (PSCs). In this work, a novel strategy is developed to form defects passivated ZnO ETL by introducing 4-tert-butylpyridine (TBP) agent into precursor. While the power conversion efficiency (PCE) of the inverted PSCs based poly{4,8-bis [(2-ethylhexyl)oxy]benzo [1,2-b:4,5-b']dithiophene-2,6-diyl-alt-3-fluoro-2-[(2-ethylhexyl)carbonyl]thieno [3,4-b]thiophene-4,6-diyl}:[6,6]-phenyl C71-butyric acid methyl ester (PTB7:PC71BM) with the pure ZnO ETL is 8.02%, that of the device with modified ZnO ETL is dramatically improved to 10.26%, with TBP accounting for ~28% efficiency improvement. Our study demonstrates that the precursor agent significantly affect the surface morphology and size of ZnO in ETL. Furthermore, it proves that the ZnO ETL with TBP (T-ZnO) is beneficial to polish interfacial contact between ETL and active layer and depress exciton quenching loss, resulting in enhanced exciton dissociation, efficient carrier collection and reduced charge recombination, thus improving the device performance. To verify the universality of T-ZnO ETL, the champion photovoltaic performance with a PCE of 11.74% (10% improvement) is obtained in the PBDB-T-2F:IT-4F based nonfullerene PSCs using T-ZnO as ETL. Our work developed a new, universal and facile strategy for designing highly efficient PSCs based on fullerene and nonfullerene blend systems.
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