Abstract

We investigated the effects of introducing tertiary-butyl chloride (TBCl) on InP and InAsP nanowire growth for the purpose of improving the tapering shape. The InP nanowire length was increased by supplying TBCl at low flow rates, and decreased gradually by supplying it at high flow rates. The growth in the radial direction was effectively suppressed by using TBCl. InAsP nanowires were also grown with TBCl. We obtained long and less tapered structures with good crystal quality. Selectivity of Cl etching to InAs and InP is discussed.

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