Abstract
AbstractWe report on the growth of Tb‐doped GaN quantum dots deposited by plasma‐assisted molecular beam epitaxy. It was found that Tb ions enhance the desorption process of Ga ad‐atom on the growing surface. This effect becomes more important with increasing growth temperature, and above a certain amount of Tb, the QDs formation is completely inhibited. Transitions from the 5D4 excited state were found intense and temperature stable, while the transitions from 5D3 excited state were only observed at low temperature. A comparative optical study with Tb‐doped AlN thick layer indicates that Tb ions are incorporated in GaN QDs. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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