Abstract
On addition of nitrogen to an argon plasma, the silicon target voltage changes. By following the target voltage during the addition and removal of the reactive gas, the influence of the plasma condition was separated from the influence of the target condition on the target voltage. In this way, we were able to investigate the target surface modification during reactive sputtering. The target surface modification seems to be induced by reactive ion implantation. The target surface modification is not stable and N 2 desorption from a silicon target after reactive sputtering is noticed.
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