Abstract
Tapping mode SPM local oxidation nanolithography with sub-10 nm resolution is investigated by optimizing the applied bias voltage (V), scanning speed (S) and the oscillation amplitude of the cantilever (A). We fabricated Si oxide wires with an average width of 9.8 nm (V = 17.5 V, S = 250 nm/s, A = 292 nm). In SPM local oxidation with tapping mode operation, it is possible to decrease the size of the water meniscus by enhancing the oscillation amplitude of cantilever. Hence, it seems that the water meniscus with sub-10 nm dimensions could be formed by precisely optimizing the oxidation conditions. Moreover, we quantitatively explain the size (width and height) of Si oxide wires with a model based on the oxidation ratio, which is defined as the oxidation time divided by the period of the cantilever oscillation. The model allows us to understand the mechanism of local oxidation in tapping mode operation with amplitude modulation. The results imply that the sub-10 nm resolution could be achieved using tapping mode SPM local oxidation technique with the optimization of the cantilever dynamics.
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