Abstract

A study of copper (Cu) diffusion into silicon substrates through TaN<sub>x</sub> and Ta/graded Ta(N)/TaN multilayer diffusion barriers was investigated based on an experimental approach. TaN<sub>x</sub> and Ta/graded Ta(N)/TaN thin films were deposited by magnetron sputtering under argon (Ar) and Ar-nitrogen (N) plasma. The influence of the N<sub>2</sub> partial pressure on the microstructure and the electrical properties is reported. The efficiency of TaN<sub>x</sub> layers and Ta/graded Ta(N)/TaN multilayer diffusion barriers was investigated after annealing at temperatures between 300 and 600◦C in Ar.

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