Abstract
This paper reports on a comparative investigation of anodically grown HfO2 and Ta2O5 films as gate oxides for pentacene field effect transistors (OFETs). Ta and Hf films were deposited by e-beam evaporation onto highly doped Si wafers and anodization is carried out in an AGW (acid-glycol-water) solution. After gate oxide growth, OFETs were completed by vacuum deposition of pentacene and gold drain and source contact through a shadow mask. HfO2 and Ta2O5 exhibit a high dielectric constant (εr ~21-25) which leads to devices showing a good field effect mobility at low voltage. Devices with HfO2 show improved characteristics with a higher stability and a lower leakage current at low drain bias as well as a high mobility (μ=2.2 10−2 cm2/V.s).
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