Abstract
ABSTRACTThis study demonstrates the feasibility of introducing a TaN thin film as a copper diffusion barrier for p-type (BiSb)2Te3 thermoelectric material. Compared to conventional Ni diffusion barrier, remarkably little void generation in Cu bulk or near Cu/TaN interface originated from Cu penetration is observed for TaN barrier after suffering the thermal budget of close to soldering. Diffusion behaviors of the barriers were analyzed by transmission electron microscopy (TEM) and energy dispersive spectrometry (EDS) to make a deep understanding in clarifying interface diffusion effects among the Cu electrode, the barrier layer, and the (BiSb)2Te3thermoelectric layer.
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