Abstract
The distortions of the optically stimulated electron emission (OSEE) spectra resulting from the exponential decay in the recording time have been analyzed. It has been shown that taking account of the emission current nonstationary in analyzing the emission spectra permits obtaining isochronal temperature dependences of intensity for selective OSEE bands. The procedure for calculating the quantum yield of the OSEE and the activation barriers of thermal ionization of the excited states of defects is described. Analysis of the photoemission kinetics permits estimating the concentration of active OSEE centers with unknown parameters (optical transition oscillator strength, quantum yield). For diamagnetic oxygen-deficient centers in glassy SiO2, the photoemission kinetics has been calculated and the thermal ionization barrier of the photoexcited singlet state and the quantum yield of the OSEE have been determined.
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