Abstract
Abstract The methods of temperature-modulated space-charge-limited currents (TM-SCLC) and post transit photocurrent analysis (PTPA) have been used to study the tail-state distribution in density of states (DOS) of p-doped a-Si:H in annealed and light soaked state. It is shown that light soaking causes an increase in the midgap DOS at about 0·50–0·55 eV accompanied by a decrease in the DOS at about 0·40–0·45 eV.
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