Abstract
In this paper, Ga-doped ZnO (GZO) thin films are deposited on glass substrates by radio frequency magnetron sputtering for low loss plasmonic applications. The effects of Ga2O3 content in the target and substrate temperature on the electrical, structural and optical properties of GZO films are investigated. Film with the highest carrier concentration of 7.0×1020cm−3 was obtained at a Ga2O3 content of 5wt% in the target under room temperature deposition. With increasing deposition temperature, the lowest electrical resistivity of 3.8×10−4Ωcm was acquired at a deposition temperature of 200°C. The values of plasmonic resonances wavelength could be changed from 1.35 to 2.39μm by adjusting the carrier concentration. Material absorption losses in these GZO films are 10 times lower than that of conventional Ag films at telecommunication wavelengths. These results make GZO a promising low-loss plasmonic material operating at telecommunication wavelengths.
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