Tailoring the optoelectronic properties of MoS2 for broadband photodetection: Showcasing an Ab-into study involving the quasi-particle correction within the Green’s function-based approximation

Abstract

In this study, the electronic and structural characteristics of both bulk and monolayer hexagonal MoS2 material are studied within and beyond density functional theory (DFT) by considering one-shot GW corrections for an accurate band gap prediction. Interestingly, our computed quasiparticle (QP) bandgap of 1.36 eV and 3.33 eV for bulk and monolayer, respectively, is in excellent agreement with the experimental finding. The elucidation of the optical properties was estimated with the aid of the Bethe–Salpeter equation within the many-body perturbation theory (MPB). The computed optical transitions such as absorption coefficient, extinction coefficient, refractive index, reflectivity, and electron energy loss function are in better agreement with the experimental data. Moreover, the new approach allows for the efficient inclusion of all conduction bands in GW calculations, significantly reducing computational costs compared to traditional methods. A good agreement of the lattice parameters, as well as the interlayer distance with the experimental findings, is observed by the inclusion of van der Waals (vdW) corrections. Besides the agreement with previously reported values, the evaluated band structure determined with the quasiparticle corrections shows that both bulk and monolayer MoS2 material exhibit semiconducting properties with direct and indirect band gaps, respectively. The calculation of the density of states reveals that the s-orbitals of S atoms and the d-orbitals of Mo are predominantly at the origin of the essential material properties secured at the Fermi level. The results of the study also point to the possibility of a foundation for creating physical structures with swift, decisive, directed, and long-range broadband photodetection capabilities.