Abstract
Chemical bath deposition has been used for depositing undoped and copper doped ZnSe thin films at 343 K temperature. Growth of the thin film requires zinc sulphate cation and sodium selenosulphate anion. The preparative parameters are optimized with an aim to obtain high quality thin films. Three different concentrations of Cu source are used. XRD pattern indicates the incorporation of copper in to polycrystalline cubic ZnSe in doped thin films and is confirmed by EDAX spectrum. SEM micrographs indicate that ZnSe dispersion in the films is homogeneous. UV–visible transmission spectra of the thin films have put into evidence that the dispersion of ZnSe nanocrystals in the thin film is improved their optical transmission. Room temperature PL spectra have shown that the addition of Cu into ZnSe enhanced the emission with additional green peak other than blue band edge emission. Electrical conductivity also modified on addition of Copper.
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