Abstract
AbstractElectronic energy level structure (ELS), charge and spin density distributions (CDD and SDD, respectively) of small indium nitride clusters have been studied by means of the first‐principle, many‐body field theoretical methods. Electron charge delocalization due to charge accumulation on nitrogen and dopant nickel atoms, and resulting violation of the octet rule of the valence theory, have been observed. This charge delocalization mechanism provides for minimization of the total cluster energy, and thus is necessary to stabilize small non‐stoichiometric indium nitride systems. It may be used to manipulate opto‐electronic properties of indium nitride clusters, and also to synthesize novel, indium nitride‐based nanostructures with desirable properties (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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