Tailoring optoelectronic properties of InGaN-based quantum wells through electric field, indium content, and confinement shape: A theoretical investigation

Abstract

This paper conducts a comprehensive theoretical examination of the electronic and optical responses, including linear and nonlinear optical responses, of an InGaN-based quantum well with a variable inverted parabolic confinement potential. This examination takes into account the effects of applied vertical electric fields, variable indium content, different confinement shapes, and sizes. The Schrödinger equation is solved numerically using the finite element method and the effective mass theory. The results indicate that both the electrical and optical properties of the system are highly influenced by these factors. Additionally, it is found that by carefully selecting these factors, the total optical absorption coefficient, total refractive index, and linear complex optical susceptibility of the system can be precisely controlled. This study makes a valuable theoretical contribution to the understanding of how electromagnetic radiation interacts with matter and can be applied to help explain the absorption and scattering properties of III-nitride materials, used in the active regions of various devices such as solar cells, photodetectors, and modulators, as well as in the design stages of them.