Abstract
This article presents ion irradiation as a unique technique for tailoring the optical properties of the semiconducting tungsten disulfide (WS2) by creating S vacancies in the system and thus controlling material stoichiometry. It is experimentally demonstrated that the S-vacancies can be created in a controllable density in the WS2 monolayer by argon ion irradiation. First-principles calculations reveal that the S-vacancies produce intermediate states in the band gap, which determines the near-infrared optical absorption of the WS2 monolayer. Increasing the density of the S-vacancies, the enhanced near-infrared linear and saturable absorption of WS2 are observed in experiments and explained by the results of first-principles calculations. Utilizing the irradiated WS2 as the saturable absorber in a waveguide laser, the passively Q-switched pulsed waveguide laser operation has been optimized, demonstrating a promising WS2 application as a saturable absorber, and opening new avenues to tailor the optical response of TMDCs.
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