Abstract
Thin films of magnesia (MgO) with (100) dominant orientations were implanted with 1.5MeV H+ ions at room temperature to various fluences of 1013, 1014 and 1015ions/cm2. X-ray analysis unambiguously showed crystallinity even after a peak damage fluence of 1015ions/cm2. Rutherford backscattering spectrometry combined with ion channeling (RBS/C) was used to analyze radiation damages and defect distributions. Optical absorption band observed at 5.7eV in implanted films was assigned to the anion vacancies and the defect was completely disappeared on annealing at 450°C. Number of F-type defects estimated was 9.42×1015cm−2 for the film implanted with 1015ions/cm2. DC electrical conductivity of 4.02×10−4Scm−1 was observed in the implanted region which was three orders higher than the as-deposited films. In unison, film surface was modified as a result of the formation of aggregates caused by the atomic mixing of native matrix atoms (Mg and O) and precipitated hydrogen.
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