Tailoring of magnetic anisotropy by ion irradiation for magnetic tunnel junction sensors

Abstract

Magnetic Tunnel Junctions (MTJ) are employed in a range of technologies such as data storage, sensing, and so on due to their compact nature and high field sensitivity. In magnetic films and structures, ion irradiation is capable of modifying the crystal structure, phases and magnetic properties including magnetic anisotropy, which enables tunability of the sensing axis of devices such as MTJ sensors. Irradiation can also adjust the magnetic properties of specific layers without affecting the others, making it one of the most effective methods to post-process multi-layered devices. In this article we review the literature of light ion irradiation effects on MTJs and their component materials, focusing on the effects most relevant to MTJ sensors, such as magnetic anisotropy and magnetization. We first briefly review the effects of the ion-solid interaction, then discuss the causes of magnetic anisotropy, and lastly, we summarize the state of the field of ion-induced modification of magnetic properties in ferromagnetic thin films, antiferromagnetic structures, and MTJs.