Abstract
Solution-processed metal oxides have been investigated as an alternative to vacuum-based oxides to implement low-cost, high-performance electronic devices on flexible transparent substrates. However, their electrical properties need to be enhanced to apply at industrial scale. Amorphous indium-gallium-zinc oxide (a-IGZO) is the most-used transparent semiconductor metal oxide as an active channel layer in thin-film transistors (TFTs), due to its superior electrical properties. The present work evaluates the influence of composition, thickness and ageing on the electrical properties of solution a-IGZO TFTs, using solution combustion synthesis method, with urea as fuel. After optimizing the semiconductor properties, low-voltage TFTs were obtained by implementing a back-surface passivated 3-layer In:Ga:Zn 3:1:1 with a solution-processed high-к dielectric; AlOx. The devices show saturation mobility of 3.2 cm2 V−1 s−1, IOn/IOff of 106, SS of 73 mV dec−1 and VOn of 0.18 V, thus demonstrating promising features for low-cost circuit applications.
Highlights
In recent years, the emergence of flexible electronics has increased scientific interest in transparent amorphous metal oxide thin-film transistors (TFTs) deposited at low temperatures on flexible substrates
In3+ cations are the main element of conduction band and due to the overlap of their 5s orbitals, indium-gallium-zinc oxide (IGZO) exhibits high mobility, even in its amorphous form; Zn2+ contributes to stabilization and enhancement of electrical properties; and Ga3+ forms strong bonds with oxygen, controlling the carrier concentration so the material might act as a semiconductor, this reduces the electron mobility compared to indium-zinc oxide (IZO) [1,2,16]
Solution-based aluminum oxide (AlOx) dielectric was implemented in IGZO TFTs, as superior device performance can be achieved by combining a high-кoxide dielectric with a semiconductor material, namely, increased mobility and lower operation voltage compared to conventional SiO2 dielectric [32]
Summary
The emergence of flexible electronics has increased scientific interest in transparent amorphous metal oxide thin-film transistors (TFTs) deposited at low temperatures on flexible substrates. In3+ cations are the main element of conduction band and due to the overlap of their 5s orbitals, IGZO exhibits high mobility, even in its amorphous form; Zn2+ contributes to stabilization and enhancement of electrical properties; and Ga3+ forms strong bonds with oxygen, controlling the carrier concentration so the material might act as a semiconductor, this reduces the electron mobility compared to IZO [1,2,16]. Solution-based aluminum oxide (AlOx) dielectric was implemented in IGZO TFTs, as superior device performance can be achieved by combining a high-кoxide dielectric with a semiconductor material, namely, increased mobility and lower operation voltage compared to conventional SiO2 dielectric [32]
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