Abstract

Manipulating Cu oxidation is important for Cu anti-oxidation techniques and Cu oxide fabrication. In this study, Cu oxidation behavior after He+ implantation was observed after exposure to 0.1 M aqueous NaOH, and the underlying microstructural evolution and mechanism were investigated. He+ implantation and some C concomitantly introduced into the Cu surface accelerated formation of a thin oxide layer during the initial oxidation period, resulting in faster initial generation and more rapid growth of CuO during the subsequent oxidation. Furthermore, He+ implantation homogenized the distribution of CuO on the Cu substrate. Our findings will increase researchers’ understanding of the oxidation and corrosion behavior of Cu in aqueous alkaline conditions, and provide new insights into designing and growing Cu oxide nanostructures by ion implantation.

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