Abstract
An experimental study of carrier escape in a series of p - i - n asymmetric double quantum well (ADQW) structures using time-resolved photoluminescence is presented. By performing complementary continuous-wave photoluminescence and photocurrent measurements the carrier escape times were extracted as a function of temperature and perpendicular applied electric field and compared with a quantitative model which includes the mechanisms of tunnelling, thermally assisted tunnelling and thermionic emission. Holes were found to dominate the escape rate, and in the light of this it is shown that if narrow wells are grown next to wider wells and nearer the p region a significantly enhanced carrier escape rate can result. This is explained by resonant hole tunnelling and may have implications in the design of QW modulator and solar cell devices with improved performance.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
