Abstract
In this study, Taguchi methodology is applied for depositing diamond-like carbon (DLC) films on P-type silicon substrates using inductively coupled plasma enhanced chemical vapor deposition (IC-PECVD) process. The Taguchi method is used to formulate the experimental layout, to analyze the effect of each process parameter and to predict the optimal choice for each process parameters such as bias voltage, bias frequency, deposition pressure and gas composition. It is found that these parameters have a significant influence on DLC properties such as ID/IG ratio, hardness and Young's modulus. The analysis of Taguchi method reveals that, in general the bias voltage significantly affects the ID/IG ratio, gas composition significantly affects the hardness and Young's modulus of DLC films. Experimental results are provided to verify this approach.
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