Abstract
Bottom-gate ZnO thin-film transistors(ZnO-TFTs) were fabricated with Ta2O5 film as the insulator.Ta2O5 film was grown by the radio-frequency magnetron sputtering at room temperature.The thickness of the Ta2O5 layers were 100,85,60,40 nm separately.The effect of the thickness on the performance of the ZnO-TFTs was studied.With the thickness of the insulator decreased from 100,85,60 nm to 40 nm,the field effect mobility increased from 50.5,59.3,63.8 to 71.2 cm2/V·s.The surface morphology of the Ta2O5 films were checked by the atomic force microscope,which showed that the root mean square(RMS) of the Ta2O5 films roughness decreases with decreasing the insulator thickness.The Ion/Ioff ratio and the threshold voltage are changed with the insulator thickness.
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