Abstract
A room temperature neutral beam oxidation process using a tantalum (Ta) metal film was used to obtain a high quality Ta oxide (Ta2O5) film. After irradiation of a Ta metal film with a neutral oxygen beam, a nanometer-thick Ta2O5 film with a film density of 7.5 g/cm3 was obtained. We also confirmed that the fabricated Cu/Ta2O5/Pt redox memory structure shows a bipolar resistive switching characteristic. This result demonstrates the great potential of neutral beam metal oxidation for the development of redox-based memory devices.
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