Abstract
Static strength tests and dynamic fatigue tests were conducted on single crystal silicon thin films under inert environment and compared with the results of polycrystalline silicon. A novel "ramping fatigue test" was utilized in this study, where the amplitude of cyclic stress applied to the specimens was gradually increased with respect to the number of cycles. It was found that single crystal silicon suffers fatigue damage also under inert environment of N_2 gas, and the strengthening due to cyclic loading found with polycrystalline silicon was not significant for the case of single crystalline silicon.
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