Abstract
Superconductivity in Si was studied in the gasketed diamond anvil cell along two different paths on P-% diagram. It was observed the practical independence of T c on pressure up to 24 GPa at liquid helium temperature pressurizing. Furthermore it was discovered that T c rises up to ≃12 K if pressure is decreased on the releasing cycle at low temperature. This result has confirmed the hypothesis about the rise of T c up to 12 K that was proposed by us earlier.
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