Abstract
Systematic tuning of photo-induced enhancement of the dielectric permittivity (i.e., the photo-dielectric effect) in Ba(Al1–xZnx)2O4–δ (BAZ-x) has been demonstrated by changing Zn concentration x and intensity of the incident light. The relative change of the dielectric permittivity (ε′), defined as Δε′photo/ε′dark, increases linearly with an increase in the Zn concentration (x), finally reaching approximately 30% at 1 MHz. The dependence of Δε′photo/ε′dark on the intensity of the incident light shows a two-step growth as the irradiation light intensity increases, suggesting the existence of multiple photo-induced processes influencing the photo-dielectric effect of BAZ-x. The results of the present study not only give a clue to the mechanism of the photo-dielectric effect but also aid in the development of innovative photo-tunable functional devices.
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