Abstract
We performed a systematic study on the transport properties of FeSe thin films with controlled degrees of in-plane lattice strain, including both tensile and compressive strains. The structural transition temperature, Ts, slightly decreases as the in-plane strain is more compressive. This suggests that the structural transition can be extinguished by a smaller amount of Te substitution for films with more compressive strain, which may lead to higher Tc in FeSe1−xTex. We also found a clear correlation between Tc and the carrier densities suggests that it is essential to increase carrier densities for the Tc enhancement of iron chalcogenides.
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