Abstract
We perform a systematic study of the factors governing the opticalproperties of type II Ga1-xInxSb/InAs superlatticestructures. We map the parameter space corresponding to the layer widths,alloy concentrations and interface bonding types, and identify thosestructures for which the fundamental gap lies in the desired range fordevice application. In addition, we examine the higher lying minibandenergies to assess the structures for favourable Auger recombinationlimits. The microscopic interface bonding configuration is shown to havea significant impact upon the magnitude of the fundamental gap, and confirmsthe requirement for full-bandstructure calculations in the evaluation ofpossible structures. We study the features of the optical spectra forthose structures whose bandstructuresare recognized as most suitable for detector applications.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
