Abstract
Fossil fuel storage is running low and scientists around the globe are involved in a big search for an optimized substitute. Photovoltaic is one of the most likely alternatives to solve this issue and replace the fossil fuels. Among all types of cells, silicon solar cells are the most economical ones to produce affordable energy. In this paper, a systematic study was done on the diffusion of phosphorous in multi-crystalline silicon during solar cell emitter formation. All parameters involved in the conversion of a multi-crystalline p-type silicon to a p–n junction were analyzed quantitatively. This systematic approach predicts the effect of inputs on the outputs which decreases the number of the trail runs. The analysis result indicate, that raising the diffusion temperature from 830 to 880 °C decreases the sheet resistance by −100 Ω/sq, and increasing POCl3 flow from 300 to 500 SCCM has an effect of −21 Ω/sq.
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