Abstract
An anomalous positive shift in flatband voltage (Vfb) with decreasing the equivalent oxide thickness (EOT) of high-k gate stacks is reported in this paper. As the SiO2 interfacial layer is aggressively thinned in Al-incorporated HfxAl1−xOy gate stacks, the Vfb first lies on the well known linear Vfb-EOT plot and deviates toward positive voltage direction (Vfb roll up), followed by shifting toward negative voltage (Vfb roll off). The Vfb roll-up behavior was ascribed to variations in fixed charges near the SiO2∕Si interface which are caused by Al diffusion from HfxAl1−xOy through SiO2 to the SiO2∕Si interface.
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