Abstract
Future high-density power electronics applications may require high-temperature optoelectronic devices for gate drive. Thus, a systematic study of optoelectronic material from 10 to 800 K has been performed to understand the potential of the high-temperature operation of optoelectronic devices. The temperature dependence of the photoluminescence (PL) of indium gallium nitride/gallium nitride multiple quantum wells was studied. The integrated PL intensity dropped by an order of magnitude at 800 K compared to 10 K. The spontaneous emission quantum efficiency was calculated from the power-law relation linking the integrated PL signal and the excitation pump power. The validation of the traditional ABC model for solid-state lighting is extended to 800 K. This paper demonstrates the feasibility of developing high-temperature optoelectronic devices, which have operating temperatures over 500 K.
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