Abstract
This paper presents the systematic design of a DC-6 GHz distributed amplifier (DA) with> 1 W output power in the WIN 0.25-,µm GaAs pHEMT technology. To tackle the input matching issues with high cutoff frequency transmission lines and minimizing Miller Effect, the cascode structure is utilized as the gain cells of the DA. To meet the bandwidth requirement, the inductive peaking technique, the m-derived network technique, and capacitive division technique are adopted and modified in the DA design for the optimum performance in terms of bandwidth, gain, power consumption and circuit area. Through assembly measured at room temperature, the measured DA demonstrates an average small signal gain of 15 dB, an output 1-dB compress point (OP ldB ) of 31 dBm.
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