Abstract
We show that the relaxation of GHz precessional motion in soft ferromagnetic thin films can be controlled through the inhomogeneous placement of dopants. Bilayers of doped and undoped permalloy (Ni81Fe19), Ni81Fe19/Ni81Fe19:Tb (Tb 5%), varied in net relaxation rate λ according to the thickness fraction of the doped layer. The behavior is roughly independent of total bilayer thickness and deposition order in the range studied (50–100 nm). The technique provides a means to control the high-speed response of magnetoelectronic devices with limited effect on signal, as magnetically active dopants can be separated from the interfaces relevant for spin transport.
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