Abstract
We present a systematic study of luminescence from strained SiGe/Si quantum well (QW) structures grown by gas source silicon molecular beam epitaxy (MBE) and the result is compared with luminescence from QWs grown by conventional solid source silicon MBE. Distinct excitonic photoluminescence (PL) was obtained both from single QW (SQW) and multiple QW (MQW) structures grown by either method. A systematic blue shift of PL energy was observed with decreasing well width and the well width dependence of PL emission energy was in good agreement with a square potential profile for QWs in the case of gas source MBE. In contrast, a considerable energy shift exceeding square potential eigenvalues was found for solid source MBE-grown QWs. We found that the asymmetric potential profile due to surface segragation of germanium atoms was responsible for this blue shift. Electroluminescence and PL data from (111)-oriented QWs are also presented.
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