Synthetic Three-Dimensional Z×Z_{2} Topological Insulator in an Elastic Metacrystal.

Abstract

We report a three-dimensional (3D) topological insulator (TI) formed by stacking identical layers of Chern insulators in a hybrid real-synthetic space. By introducing staggered interlayer hopping that respects mirror symmetry, the bulk bands possess an additional Z_{2} topological invariant along the stacking dimension, which, together with the nontrivial Chern numbers, endows the system with a Z×Z_{2} topology. A 4-tuple topological index characterizes the system's bulk bands. Consequently, two distinct types of topological surface modes (TSMs) are found localized on different surfaces. Type-I TSMs are gapless and are protected by Chern numbers, whereas type-II gapped TSMs are protected by Z_{2} bulk polarization in the stacking direction. Remarkably, each type-II TSM band is also topologically nontrivial, giving rise to second-order topological hinge modes (THMs). Both types of TSMs and the THMs are experimentally observed in an elastic metacrystal.