Abstract
A comparative study of electrochemical kinetics in ferro- and ferricyanide solutions is performed. Electrochemical impedance spectra for the growth and nucleation sides of relatively thin films of boron-doped polycrystalline diamond synthesized by hot-filament CVD technology are taken. Concentrations of noncompensated acceptor near the growth and nucleation surfaces are estimated. It is shown that the growth and nucleation surfaces differ little in their electrochemical behavior, which is attributed to the absence of significant difference in the concentration of electrochemically active structural defects or the boron-acceptor impurity between the two sides of thin diamond films.
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