Abstract
Photovoltaic (PV) devices based on bulk polycrystalline Cu2ZnSn(S1–xSex)4 (CZTSSe) as the absorber material have historically shown the best efficiency with high Se compositions. The selenization process, which is employed in the formation of absorber layer, has been shown to result in maximum device efficiency at a lower than predicted optimal band gap (Eg= ∼1.1 eV as compared to the 1.34 eV predicted by the Shockley–Queisser detailed balance model). It is still not clear if this deviation is due to changes in the chalcogen composition, grain growth in the film, or increased order in the lattice. In contrast, CZTSSe nanocrystals (NCs) offer a unique opportunity to evaluate the effect of chalcogen ratio on light absorption, charge transport, and photovoltaic performance excluding the impact of the uncertain effects of the conventional selenization step and, importantly, offer a potential path to a dramatic reduction in PV manufacturing cost. Despite an abundance of literature reports on this compound, the...
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