Synthetic Antiferromagnetic Structures in Technology of Spintronic Devices

Abstract

In this paper, we consider synthetic antiferromagnetic (SAF) structures and their influence in a fixed layer of a spin-tunnel junction on the magnitude of the magnetoresistive effect and temperature stability. The SAF structure consists of two ferromagnetic (FM) layers, between which a nonmagnetic film is located. The ion exchange interaction of two FM layers has an oscillating character and depends on the nonmagnetic layer thickness and the surface roughness of the FM layers. The mechanism of SAF magnetization reversal with fixation by an antiferromagnetic layer and in its absence, as well as the effect of the sequence of deposition of layers in the SAF structure on its properties, are considered. The main applications of SAF structures as a part of spintronic devices is described.