Abstract

In this study, pure Co3O4 nano structure and doping with 4 %, and6 % of Yttrium is successfully synthesized by hydrothermal method.The XRD examination, optical, electrical and photo sensingproperties have been studied for pure and doped Co3O4 thin films.The X-ray diffraction (XRD) analysis shows that all films arepolycrystalline in nature, having cubic structure.The optical properties indication that the optical energy gap followsallowed direct electronic transition calculated using Tauc equationand it increases for doped Co3O4. The photo sensing properties ofthin films are studied as a function of time at different wavelengths tofind the sensitivity for these lights.High photo sensitivity doped Co3O4 with 6% of Yttrium, is a118.774% at wavelength 620 nm, while for pure Co3O4 films nosensitivity at the same wavelength. So, higher sensitivity is found fordoping Co3O4 with fast rise and fall times less than 1s.

Highlights

  • Cobalt oxide (Co3O4) is an important P-type semiconductor with direct optical band gaps at 1.48 and 2.19 eV [1, 2]

  • In addition to these peaks it can be observed that the patterns exhibit diffraction peaks about (2θ~ 33.8230ο, 48.7611ο and 57.8200ο) denoted to (400), (440) and (622) preferred directions respectively for yttrium oxide as revealed in Table 1, which is in agreement with (ASTM) card number 96-100-9018 which shows the cubic structure and identical peaks appeared with the researchers [10,11,12]

  • For energy gap of doping cobalt oxide with Yttrium, blue shift happened, i.e. the optical energy gap increases with respect to Co3O4 with doping with Yttrim, this an indication that a strong quantum confinement happened and the particle size decreased, Table 3 revealed the results of energy gap for pure and doped Co3O4

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Summary

Introduction

Cobalt oxide (Co3O4) is an important P-type semiconductor with direct optical band gaps at 1.48 and 2.19 eV [1, 2]. Introduction Cobalt oxide (Co3O4) is an important P-type semiconductor with direct optical band gaps at 1.48 and 2.19 eV [1, 2].

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