Abstract
Cu2FeSnS4 (CFTS) thin film has been synthesized by rapid thermal annealing sulfurization of radio-frequency magnetron sputtered precursor. X-ray diffraction pattern indicates that all phases belong to CFTS with tetragonal structure. The strain which exists in the film is calculated to be 8.29×10−3 using the Williamson–Hall method. Raman spectrum and infrared reflectivity present two A1, two B and three E optical vibration modes. The band gap of CFTS is evaluated to be 1.42eV by the transmission spectrum. The electrical properties of CFTS with the structure of glass/Mo/CFTS/CdS/i-ZnO/AZO have also been discussed. The open circuit voltage (Voc) is 110mV, short circuit density (Jsc) is 2.5mAcm−2 and fill factor (FF) is 26.3%. These results are helpful to the preparation and further study of CFTS thin films for the solar cell application.
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