Abstract
Production and characterization of molybdenum disulfide (MoS2) and other transition metal dichalcogenide materials attract significant attention of scientific community due to pronounced two‐dimensional character of their electronic properties. Herein, MoS2 synthesis by chemical vapor deposition with gaseous hydrogen sulfide (H2S) containing thermally evaporated molybdenum (Mo) is presented. The films deposited onto silicon (Si) substrate consist of flake‐like crystallites of nanometer thickness assembled of parallel atomic layers oriented predominantly along a normal to the substrate surface. The dependence of film morphology on deposition time, substrate temperature, and precursor composition in gaseous phase is investigated. The Raman spectroscopy and electron microscopy analysis reveal the presence of mono‐ and bilayered structures in the film. Photoluminescence (PL) efficiency of the films is found to be increased in comparison with the monolayer MoS2 crystallites. The high PL efficiency in combination with the high spatial uniformity of the film materials makes them prospective for application in electronic and photonic industry.
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