Abstract
The β-SiC nanowires (NWs) prepared by a simple carbon template method exhibit two kinds of electrical transport properties, depending on their crystalline structures. A part of the NWs exhibit the resistivities as low as 1.5 × 10−5 to 3 × 0−4 Ω cm due to n-type doping from the intrinsic planar defects and stacking faults, forming Ohmic contact with Au electrodes; the other ones show a typical characteristic of the semiconductor with a remarkable increase in resistivity by 5–7 magnitude orders, owing to a nearly perfect single-crystalline structure with few intrinsic defects. Additionally, the electrical breakdown behavior is observed in the metallic NWs.
Published Version
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