Abstract
The synthesis parameter space of bismuth catalyzed germanium nanowires by chemical vapor deposition is determined. The process window for high aspect ratio nanowires is found to be extremely narrow. The optimal conditions are found to be 300 °C and 150 Torr gas pressure. For lower temperatures, the solubility of Ge in Bi is too low for the nucleation of Ge nanowires to occur. For higher temperatures, small Bi droplets tend to evaporate leading to an extreme reduction in the nanowire density. The extremely low process temperature makes Bi a good candidate for its growth on low cost and low thermal budget substrates such as plastics.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
