Abstract
ZnSe quantum dots are key research interest of many groups from past few decades because of their novel opto-electronic properties. It is a direct wide band gap semiconductor having a band gap of 2.70eV. ZnSe based quantum dots have many application in various fields such as solar cell, scintillators, schottky diodes etc. Considering its multifarious applications and asserts of ZnSe nanostructures, it is a worldwide research interest. In this study we are going to report a conventional wet chemical method to synthesize ZnSe quantum dots with stoichiometric ratio difference of 3:2, 3:1 and 1:1 between Zn and Se. Characterization method such as Photoluminescence, X-Ray Diffraction (X.R.D), Transmission Electron Microscopy (T.E.M) were carried out. TEM imaging was executed to find out the size distribution, which was in the range of 2 to 10nm (diameter). A wurtzite crystal structure of quantum dots has been confirmed by X.R.D also a band edge emission with a distinct blue shift in terms of wavelength is observed from Photoluminescence studies.
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