Abstract
An approach is proposed to study the composition of synthesized thin zinc films doped with In and Ga through local X-ray spectral analysis (LXSA) and inductively coupled plasma mass spectrometry (ICP-MS). A relationship between the amount/distribution of additives in the sample and synthesis conditions on rotating substrates is found. The results of determining the dominant impurities in film solutions with ICP-MS are used to validate those obtained with the LXSA method without sample preparation. To find doping impurities at an amount less than 1 at % is possible only through the ICP-MS method.
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