Abstract

ZnO nanostructures were deposited on various substrates like glass, Si wafer and Al2O3/Si substrates using microwave oven based plasma deposition system at oxygen and atmospheric plasma conditions. Various morphologies were exhibited by the ZnO nanostructures grown on different substrates depending on Zinc salt concentration, plasma source and substrate material.

Highlights

  • Investigations of ZnO as a compound semiconductor were performed in the research field since last few decades due to their unique properties such as large band gap (3.37eV), high conductivity and large exciton binding energy (60meV)

  • We have reported the synthesis of highly c-axis oriented ZnO thin films on different substrates by solvent assisted thin film deposition in plasma

  • We have tried to investigate the effect of different substrates and precursor concentrations on the degree of orientation and morphology of ZnO nanostructures

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Summary

Introduction

Investigations of ZnO as a compound semiconductor were performed in the research field since last few decades due to their unique properties such as large band gap (3.37eV), high conductivity and large exciton binding energy (60meV). Many researchers have synthesized ZnO by different processes like chemical vapour deposition, Atomic layer deposition, sputtering, molecular beam epitaxy, sol–gel technique etc. We have reported the synthesis of highly c-axis oriented ZnO thin films on different substrates by solvent assisted thin film deposition in plasma. We have tried to investigate the effect of different substrates and precursor concentrations on the degree of orientation and morphology of ZnO nanostructures. Zinc Oxide can be produced from stable salt of acetate, nitrate and chloride as reported in the literature. X ray diffraction analysis gives details about the structure and preferred orientation planes, while SEM analysis investigates the morphology of the sample

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