Synthesis of ZnO:B thin films Dropped on Porous Silicon for H2 Gas Sensing

Abstract

Porous Silicon PS has been prepared so as to use it a substrate to dropped ZnO:B thin films with different boron concentrations additions (2- 8) % dropped at 450°C through used the chemical spray pyrolysis (CSP) technique in approximately 150nm thicknesses. Crystallite and Grain size decreases with adding more of boron as a doping for zinc oxide films which dropped on the negative type (n-type) and positive type (p-type) of PS. Surface morphology study for the obtained the ZnO:B thin films and for the n-PS and p-PS was studied by TEM, SEM and AFM. Sensing properties of ZnO:B thin films for H2 gas showed that the increases of boron leads to increases of the thin films sensitivity, measured sensitivity of the n-PS substrate was more than p-PS.