Synthesis of yttrium oxide thin films with and without the use of organic self-assembled monolayers

Abstract

Thin Y-containing films have been deposited at 80 °C from aqueous solutions of YNO3⋅5H2O and urea on bare single crystal Si wafers, and on Si wafers coated with sulfonate-functionalized organic self-assembled monolayers. The as-deposited films are believed to be an amorphous yttrium basic carbonate and can be completely transformed at 600 °C in air to crystalline Y2O3. Capacitance–voltage measurements on these films showed good dielectric properties, with a relative permitivity of 18, more than a factor of four higher than that of SiO2.