Synthesis of Well-Aligned Carbon Nanotubes Using a High-Density RF Inductive Coupling Plasma

Abstract

Growth of vertically well-aligned carbon nanotubes was demonstrated utilizing high-density rf inductive coupling plasma-enhanced chemical vapor deposition of methane. A sufficient supply of CH4-related precursors as well as a rapid large number of dangling bonds at the top surface due to a negative substrate dc bias are essential for promoting the deposition rate of vertically well-aligned carbon nanotubes. Rapid deposition at 60 Å/s of vertically well-aligned multi-walled carbon nanotubes was achieved using pure methane (50 sccm) by adjusting the plasma conditions.